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Quantum well dimensions4/9/2024 ![]() Appl Phys Lett 44(5):476–478Įsaki L, Tsu R (1970) Superlattice and negative differential conductivity in semiconductors. Hersee SD, De Cremoux B, Duchemin JP (1984) Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structure. This high-quality MQW structures with wide band gap semiconductor as active region can be utilized as UV emitters. The observed room-temperature PL emission from the MQW structures is found to be blue shifted as compared to the room-temperature near-band-edge PL emission from ZnO thin film grown at same experimental conditions. Room-temperature PL emission was observed from these MQW structures, and a systematic blueshift in the PL peak position corresponds to the quantum confinement effect was observed with decrease in the confinement layer (ZnO) thickness. The fabrication of symmetric and asymmetric MQW structures based on ZnO with ZnMgO and CuGaO 2 as the barrier layer by pulsed laser ablation technique was discussed in detail. Quantum wells are thin layered heterostructures grown in such a way that a smaller band gap semiconductor layer (confinement layer) having very small thickness is sandwiched between two wider band gap semiconductor layers (barrier layer). In this chapter, the optical properties of ZnO-based multiple quantum well (MQW) structures are discussed. ![]()
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